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 STC08IE150HV
Emitter switched bipolar transistor ESBT(R) 1500V - 8A - 0.08
Features
VCS(ON) 0.65 V

IC 8A
RCS(ON) 0.08
High voltage / high current cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHz Squared RBSOA, up to 1500 V Very low CISS driven by RG = 4.7 Very low turn-off cross over time Figure 1. Internal schematic diagrams
1 23 4
TO247-4L HV
Application

Aux SMPS for three phase mains PFC
Description
The STC08IE150HV is manufactured in monolithic ESBT technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in gate driven based topologies.
Table 1.
Device summary
Marking C08IE150HV Package TO247-4L HV Packaging Tube
Part number STC08IE150HV
November 2007
Rev 3
1/11
www.st.com 11
Contents
STC08IE150HV
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STC08IE150HV
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ
Absolute maximum ratings
Parameter Collector-source voltage (VBS =VGS =0) Base-source voltage (IC =0, VGS =0) Source-base voltage (IC =0, VGS =0) Gate-source voltage Collector current Collector peak current (tP < 1 ms) Base current Base peak current (tP < 1 ms) Total dissipation at Tc 25C Storage temperature Max. operating junction temperature Value 1500 30 17 Unit V V V V A A A A W C C
17
8 24 8 12 208 -40 to 150 125
Table 3.
Symbol
Thermal data
Parameter max Value 0.6 Unit C/W
Rthj-case Thermal resistance junction-case
3/11
Electrical characteristics
STC08IE150HV
2
Electrical characteristics
(Tcase = 25C unless otherwise specified) Table 4.
Symbol ICS(SS) IBS(OS) ISB(OS) IGS(OS) VCS(ON)
Electrical characteristics
Parameter Test conditions Min. Typ. Max. 100 10 100 100 0.3 0.65 9 4.5 14 6.8 1 1.7 2 3 810 1.5 2 4 V V V pF 1.2 1.5 Unit A A A nA V V
Collector-source cut-off VCS =1500 V current (VBS =VGS =0) Base-source cut-off current (IC =0, VGS =0) Source-base cut-off current (IC =0, VGS =0) Gate-source cut-off current (IC=0; VBS =0) Collector-source on voltage DC current gain VBS =30 V VSB =17 V VGS = 17 V VGS =10 V IC =3 A IB =0.3 A VGS =10 V IC =8 A IB =1.6 A VGS =10 V VCS =1 V VGS =10 V VCS =1 V IC =3 A IC =8 A
hFE
VBS(ON) VGS(th) Ciss
Base-source on voltage Gate threshold voltage Input capacitance
VGS =10 V IC =3 A IB =0.3 A VGS =10 V IC =8 A IB =1.6 A VBS =VGS VCS =25 V VGS=VCB=0 VCS=25 V VCB=0 VGS =10 V Vclamp =1200V IC =4 A VGS =10 V Vclamp =1200 V IC =4 A VCC =Vclamp =600 V VGS=10 V IC =4 A RG =4.7 tp =4 s IB =0.8 A RG =4.7 tp =4 s IB =0.4 A IB =250 A f =1 MHz
QGS(tot)
Gate-source charge Inductive load Storage time Fall time Inductive load Storage time Fall time Collector-source dynamic voltage (500 ns)
45
nC
ts tf
690 10
ns ns
ts tf
340 10
ns ns
VCS(dyn)
VGS =10 V IB = 0.4 A t(peak) =500 ns
IC =2 A RG =4.7 IB(peak) =4 A
2.8
V
4/11
STC08IE150HV Table 4.
Symbol
Electrical characteristics Electrical characteristics (continued)
Parameter Collector-source dynamic voltage (1 s) Test conditions VCC =Vclamp =600 V IC =2 A VGS =10 V RG =4.7 IB = 0.4 A IB(peak) =4 A t(peak) =500 ns hFE = 5 IC = 8 A 1500 Min. Typ. Max. Unit
VCS(dyn)
1.7
V
VCSW
Maximum collectorsource voltage switched RG =4.7 without snubber
V
5/11
Electrical characteristics
STC08IE150HV
2.1
Electrical characteristics (curves)
Figure 2. Output characteristics Figure 3. Gate threshold voltage vs temperature
Figure 4.
Reverse biased safe operating area
Figure 5.
DC current gain
Figure 6.
Collector-source voltage @hFE= 5
Figure 7.
Collector-source voltage @hFE= 10
6/11
STC08IE150HV Figure 8. Base-source voltage @hFE= 5 Figure 9.
Electrical characteristics Base-source voltage @hFE= 10
Figure 10. Inductive load switching time Figure 11. Inductive load switching time @hFE= 5 @hFE= 10
Figure 12. Dynamic collector-source voltage
7/11
Package mechanical data
STC08IE150HV
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
8/11
STC08IE150HV
Package mechanical data
TO247-4L HV MECHANICAL DATA
mm. MIN. 4.85 2.20 0.95 2.50 0.40 23.85 15.45 2.54 5.08 10.20 2.20 2.50 18.50 3 3.55 5.50 3.65 10.80 2.80 24 21.50 15.60 15.75 2.50 1.27 1.10 1.30 2.90 0.80 24.15 TYP MAX. 5.15 2.60
DIM. A A1 A2 b b2 c D D1 E e e1 L L1 L2 L3 P S
7734874
9/11
Revision history
STC08IE150HV
4
Revision history
Table 5.
Date 30-Jan-2006 01-Dec-2006 22-Nov-2007
26
Document revision history
Revision 1 2 3 First release The document has been reformatted, no content change Document status promoted from preliminary data to datasheet. Added Section 2.1: Electrical characteristics (curves) Changes
10/11
STC08IE150HV
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